THE REACTIVITY AND MOLECULAR SIZE OF FILM PRECURSORS DURING CHEMICAL VAPOR DEPOSITION OF WSix
نویسندگان
چکیده
A kinetic study of chemical vapor deposition of tungsten silicide films was made, focusing on the reactivity and molecular size of film precursors. Tungsten silicide (WSL) fllms were deposited by low pressure CVD from SiH, and WF,. The molecular size of the film precursor was calculated to fit to the diffusion coefficient obtained from the deposition rate profile in a tubular reactor. Typically the ske was 5-& which is close to the size of the WF, molecule. The sticking probability of the film precursor was also examined by observing step coverage in a micron size trench. The sticking probability was about 0.5 at 270-360'C and dependent only slightly on temperature. The partial pressure ratio of SiH, to WF, was varied from 5 to 100, but the sticking probability did not change and the step coverage remained poor. Some modifications of reaction system would be required to improve the step coverage.
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